From: Study of the properties of electro-physical parameters in spatially incoherent crystal semiconductors on the example of layered AIIIBVI semiconductor compound crystals

Figure 4. Dependence of the mobility of the main free charge carriers (curves 1-6) and the specific electrical conductivity (curves 7-12) in pure (1-3 and 7-9) and REE-doped (curves 4-6 and 10-12) n-InSe crystals on the intensity of the electric field applied galvanically to the sample
Т = 77 K;
ρ77, Ω·sm: 1, 7 – 9·106; 2, 8 – 3·105; 3, 9 – 2·103
NREE, аt.%: 4, 10 - 10-5; 5, 11 – 5·10-3; 6, 12 - 10-1