From: Study of the properties of electro-physical parameters in spatially incoherent crystal semiconductors on the example of layered AIIIBVI semiconductor compound crystals

Figure 3. Dependence of the specific electrical conductivity (curve 1), the mobility of free main charge carriers (curve 2), and the Hall coefficient (curve 3) in n-InSe crystals doped with rare earth elements on the amount of dopant added to the sample T=77 K