From: Study of the properties of electro-physical parameters in spatially incoherent crystal semiconductors on the example of layered AIIIBVI semiconductor compound crystals

Figure 1. Temperature dependence of the Hall coefficient (curves 1-3), specific electrical conductivity (curves 4-6), and free carrier mobility (curves 7-9) in pure n-InSe crystals with different initial values of their specific resistance in the dark (ρ77):
ρ77, Ω·sm: 1, 4, 7 – 2·103; 2, 5, 8 - 3·105; 3, 6, 9 – 9·106