Figure 2. Depth distribution of boron atoms embedded in diamond with different energies through an Al mask and without a mask. Аl mask thickness, enerji of В+: 1-Al-30nm, 10кеV, 2-Al-50nm, 15кеV, 3-Al-70nm, 20кеV, 4-Al-80nm, 25кеV, 5-without a mask, 10ке

From: Growth of synthetic diamond films and their electrophysical properties