UNEC Journal of Engineering and Applied Sciences Volume 3, No 1 (2023), pages 10-14 (2023) Cite this article, 996 https://doi.org/10.61640/ujeas.2023.0502
AlN is one of the promising material that has a very interesting physical properties. Although the wide band gap (~ 6 eV), AlN demonstrate excellent optical properties like semiconductor material [1-7]. Moreover, high chemical stability, high melting point and excellent crystallinity degree allow using it in the various filed of science and technology. Due to the excellent properties of AlN is widely studied by researcher [8-16]. In particular, high stability at higher temperatures is provide important applications in nuclear, as well as aviation and space technologies.
It is known that the study of physical properties is key method to investigate application perspectives of the materials. In this regards, an investigation of thermal parameters are important way to study of the materials. As mentioned above, due to the high stability of the AlN, it is very interesting to investigate the thermophysical parameters. Although the thermal parameters of nano AlN were investigated in our previous works [16, 17], some details are also considered in this study. The result of the diferential thermal analysis and diferential thermal gravimetry are discussed in detail. Based on the experimental results, the enthalpy and entropy in the nano AlN were calculated weat different thermal treatment rates were calculated (theoretical calculations were justified by experimental results). The values acquired from the experimental results were compared for all thermophysical parameters at different thermal treatment rates.
Nano AlN particles with particle size 65-75 nm, and 99+% purity were taken as the research object. The experiments were performed on the “DSC/TGA3+” device produced by Metler Toledo. Operating range of this device is 290 K-1400 K, thermal treatment rates were selected as 5, 10, 15 and 20 K/min. In order to remove combustion products from the system and to prevent the condensation process, argon inert gas was used and supplied to the system with 20 ml/min rate. A standard aluminum-oxide-based pan was used. The mass of the sample is determined with an electronic recording device placed on the thermocouple with ±10-6 g accuracy. The difference between the sample-filled pan and empty pan weights were automatically recorded. All results obtained in the experiments and later according to the theoretically calculated values are graphically depicted in the "Origin Pro 9.0" program.
In the presented work, nano AlN particles were studied separately in heating and cooling processes in the temperature range of 300 K – 1400 K with four different heating rates (5 K/min, 10 K/min, 15 K/min and 20 K/min). DTA and DTG spectra of AlN nanoparticles at all thermal treatment rates (5 K/min, 10 K/min, 15 K/min and 20 K/min), Gibbs energy, enthalpy and entropy of the system were theoretically calculated based on experimental results. Figure 1 briefly shows the DTA and DTG spectra corresponding to the thermal treatment rates of 5 K/min and 20 K/min during the heating processes.
Figure 1. DTA and DTG spectra of heating process at different rates of thermal treatment of AlN nanoparticles (a – 5 K/min, b – 20 K/min)
Figure 2. DTA and DTG spectra of cooling process at different rates of thermal treatment of AlN nanoparticles (a – 5 K/min, b – 20 K/min)
Figure 3. Temperature dependences of free Gibbs energy in the heating and cooling processes of nano AlN particles at different thermal treatment rates (a heating process, b cooling process)
Based on the results of the entropy and enthalpy analyses, it was found that the oxidation process is started in AlN nanoparticles after 750 K. However, DTG curves proved that additional trace elements leave the system, which causes the mass to decrease when the temperature increases up to 1200 K. From the temperature T>1200 K, the oxidation process became stronger than the impurities leaving the substance and the mass begins to increase. In both heating and cooling processes, the equilibrium state at 1200 K temperature was determined from Gibbs energy, entropy and enthalpy curves. According to the calculated Gibbs free energy, it is known that AlN nanoparticles are spontaneous or more stable at relatively low temperatures. It was determined that the numerical value of the free Gibbs energy decreases with the increase in the rate of thermal treatment. The decrease in the numerical value of the Gibbs free energy directly explains the stability of the system.
1 A.F Belyanin, L.L Bouilov, V.V Zhirnov, A.I Kamenev, K.A Kovalskij, B.V. Spitsyn, Diamond and Related Materials 8(2-5) 369.
2 Anming Gao, Kangfu Liu, Junrui Liang, Tao Wu, Microsystems & Nanoengineering 6 (2020).
3 Nanxi Li, Chong Pei Ho, Shiyang Zhu, Yuan Hsing Fu, Yao Zhu and Lennon Yao Ting Lee, Nanophotonics 10(9) (2021) 2347.
4 Mengmeng Miao, Ken Cadien, RSC Adv. 11 (2021) 12235.
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9 Nian L, Qu Y, Gu X, Luo T, Xie Y, Wei M, Cai Y, Liu Y, Sun C, Micromachines 14(3) (2023) 557.
10 Nguyen, H.P.T. Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices. Light Sci Appl 11 164 (2022).
11 M.-A. Dubois, P. Muralt, Appl. Phys. Lett. 74 (1999) 3032.
12 I.A Aleksandrov, T.V Malin, D.S Milakhin, B.Ya Ber, D.Yu Kazantsev,K.S Zhuravlev, Semiconductor Science and Technology 35(12).
13 Y. Sugahara, Aluminum Nitride. In: Kobayashi, S., Müllen, K. (eds) Encyclopedia of Polymeric Nanomaterials. Springer, Berlin, Heidelberg 20 (2015).
14 Jiarui Gong, Jie Zhou, Ping Wang, Tae-Hyeon Kim, Kuangye Lu, Seunghwan Min, Ranveer Singh, Moheb Sheikhi, Haris Naeem Abbasi, Daniel Vincent, Ding Wang, Neil Campbell, Timothy Grotjohn, Mark Rzchowski, Jeehwan Kim, Edward T. Yu, Zetian Mi, Zhenqiang Ma, Advanced Electronic materials 9(5) (2023) 2201309.
15 S.G. Bishop, J.P. Hadden, F.D. Alzahrani, R. Hekmati, D.L. Huffaker, W.W. Langbein, A.J. Bennett, ACS Photonics 7(7) (2020) 1636.
16 S.G. Bishop, J.P. Hadden, F.D. Alzahrani, R. Hekmati, D.L. Huffaker, W.W. Langbein, A.J. Bennett, ACS Photonics 7(7) (2020) 1636.
17 E.M. Huseynov, T.G. Naghiyev, Adv. Phys. Res. 1(2) (2019) 99.
T.G. Naghiyev, E.M. Huseynov, An investigation of AlN nanoparticles by DTA and DTG methods, UNEC J. Eng. Appl. Sci. 3(1) 2023 10-14 https://doi.org/10.61640/ujeas.2023.0502
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A.F Belyanin, L.L Bouilov, V.V Zhirnov, A.I Kamenev, K.A Kovalskij, B.V. Spitsyn, Diamond and Related Materials 8(2-5) 369.
Anming Gao, Kangfu Liu, Junrui Liang, Tao Wu, Microsystems & Nanoengineering 6 (2020).
Nanxi Li, Chong Pei Ho, Shiyang Zhu, Yuan Hsing Fu, Yao Zhu and Lennon Yao Ting Lee, Nanophotonics 10(9) (2021) 2347.
Mengmeng Miao, Ken Cadien, RSC Adv. 11 (2021) 12235.
T. Gergs, T. Mussenbrock, J. Trieschmann, Sci Rep 13 (2023) 5287.
K. Nagamatsu, T. Miyagawa, A. Tomita et al., Sci Rep 13 (2023) 2438.
H. Morkoç, Encyclopedia of Materials: Science and Technology (Second Edition) (2001) 121.
M. Assylbekova, G. Chen, M. Pirro, G. Michetti, M. Rinaldi, "Aluminum Nitride Combined Overtone Resonator for Millimeter Wave 5g Applications," 2021 IEEE 34th International Conference on Micro Electro Mechanical Systems (MEMS), Gainesville, FL, USA (2021) 202.
Nian L, Qu Y, Gu X, Luo T, Xie Y, Wei M, Cai Y, Liu Y, Sun C, Micromachines 14(3) (2023) 557.
Nguyen, H.P.T. Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices. Light Sci Appl 11 164 (2022).
M.-A. Dubois, P. Muralt, Appl. Phys. Lett. 74 (1999) 3032.
I.A Aleksandrov, T.V Malin, D.S Milakhin, B.Ya Ber, D.Yu Kazantsev,K.S Zhuravlev, Semiconductor Science and Technology 35(12).
Y. Sugahara, Aluminum Nitride. In: Kobayashi, S., Müllen, K. (eds) Encyclopedia of Polymeric Nanomaterials. Springer, Berlin, Heidelberg 20 (2015).
Jiarui Gong, Jie Zhou, Ping Wang, Tae-Hyeon Kim, Kuangye Lu, Seunghwan Min, Ranveer Singh, Moheb Sheikhi, Haris Naeem Abbasi, Daniel Vincent, Ding Wang, Neil Campbell, Timothy Grotjohn, Mark Rzchowski, Jeehwan Kim, Edward T. Yu, Zetian Mi, Zhenqiang Ma, Advanced Electronic materials 9(5) (2023) 2201309.
S.G. Bishop, J.P. Hadden, F.D. Alzahrani, R. Hekmati, D.L. Huffaker, W.W. Langbein, A.J. Bennett, ACS Photonics 7(7) (2020) 1636.
S.G. Bishop, J.P. Hadden, F.D. Alzahrani, R. Hekmati, D.L. Huffaker, W.W. Langbein, A.J. Bennett, ACS Photonics 7(7) (2020) 1636.
E.M. Huseynov, T.G. Naghiyev, Adv. Phys. Res. 1(2) (2019) 99.