From: Calculation of lifetime and impurity photoconductivity in the development of photodetectors for the gas-discharge cell

Figure 1. Dependence of impurity photoconductivity on the Fermi level position at different values of excitation light intensity J. J, photon/(sm2•s):
1 – 1013, 2 – 1015, 3 – 1017, 4 – 1019, 5 – 1020,
6 – 1021, 7 – 1022, 8 – 1024,   9 – 1026. Values of design parameters: М = 1015 sm-3,
NcM  = 10-9 sm-3, γ = 10-10 sm3/с,   q = 10-15 sm2